List of All KemLab™ Resists
KemLab™ offers a variety of photoresists. Below is a complete list of KemLab™ resists. Click on the film thickness chart to the right to view the resists by film thickness, competitive products, tone, developer, or exposure.
KL 5302 Hi-Res Positive Thin
Film Thickness: 0.2 microns
Applications: Diffraction Grating, Interference Lithography
Designed for film thickness of ~200 nm. It is applied in interference or holographic lithography.
Applied in broadband exposure tools or steppers
KL 5300 Series General Purpose Positive Thin
Film Thickness: 0.5 - 2.0 microns
Applications: IC fabrication
KL5300 series are positive photoresists for use in i-Line, g-Line and broadband applications. They offer high sensitivity, high resolution and excellent process latitude. They are designed for use with industry standard 0.26 N TMAH developers. Resolution of 0.55 µm can be achieved. Custom formulations are available.
KL 6000 Series General Purpose Positive Thick
Film Thickness: 2.5 – 12 microns
Applications: advanced packaging, TSV, bumping, electroplating
KL6000 series are positive photoresists for use in i-Line, g-Line and broadband applications. KL6000 offers high sensitivity, high throughput, and excellent process latitude. It is designed for use with industry standard 0.26 N TMAH developers. There is no PEB necessary. Custom formulations are available.
K-PRO™ Advanced Packaging Thick
Film Thickness: 5 – 25+ microns
Applications: advanced packaging, plating, TSV, bumping
K-PRO™ photoresists are advanced packaging positive resists for use in i-line, g-line and broadband packaging applications. They are compatible with plating metals including copper, pure tin, and nickel and offer high sensitivity, high throughput, and excellent process latitude. K-PRO™ positive-tone photoresists are designed to cover varied terrain for advanced wafer level packaging, MEMS, and 3D photolithography applications.
APOL-LO 3200 Hi-Res Negative Lift-Off
Film Thickness: 2 – 10+ microns
Applications: Compound Semiconductors, LED
APOL-LO 3200 Series resist is a negative tone advanced photoresist with Lift-Off profile for i-Line, and broadband applications. It has improved resolution and a wider process window compared to the original negative lift-off KL1600. It is designed for use with industry standard developers. Custom formulations are available to adjust lift-off angle and the photospeed.
NPR Negative with Vertical Profile
Film Thickness: Up to 20 microns
Applications: TSV, electroplating, metal deposition, RIE etch
KL NPR is a negative tone, novolac photoresist designed for electroplating, metal deposition, TSV, and RIE etch. It has a single coat film thickness of up to 20 µm and features vertical sidewalls and high aspect ratios. KL NPR is thermally stable and can withstand temperatures up to 130⁰C without profile degradation.
KL IR Image Reversal
Tone: Positive / Negative
Film Thickness: 1-2 microns
KL IR15 image reversal series of photoresists are used as either positive and negative photoresist in i-line, g-line and broadband applications.
IR15: Designed for straight profiles when used as negative photoresist
IR15 Lift-Off: Designed for lift-off profiles when used as negative photoresist
HARE SQ™ Negative Tone Epoxy
Film Thickness: 2 to 100+ microns
Applications: MEMS, microfluidics
HARE SQ™ is a negative tone epoxy photoresist designed for polymeric MEMS, microfluidics, micromachining and other microelectronic applications. This resist has excellent chemical, mechanical and thermal resistance, making it suitable for permanent applications. It is fully compatible with SU-8™ processes. It is sensitive to NUV, i-line and broadband wavelengths. HARE SQ uses superior epoxies specially designed for the electronics industry, making improvements in optical transparency, particles and filter-ability, cured surface energy consistency, and photoresist lot-to-lot consistency versus industry competitors.
1000 HARP™ PMMA e-Beam
Film Thickness: 0.1 - 2.7 microns approximate @ 2000 rpm
Applications: direct write lithography, T-gate manufacture, X-Ray LIGA, wafer thinning
HARP™ PMMA (polymethyl methacrylate) e-Beam resist is designed for high resolution direct write e-Beam lithography. When combined with HARP-C™ copolymer, the HARP™ multi-layer system is ideal for T-gate manufacture. HARP™ PMMA has excellent adhesion to a wide variety of substrates, and is used as a protective coating layer for wafer thinning and sacrificial layers. KemLab HARP™ PMMA products are manufactured in safe solvents (anisole and ethyl lactate).