Copyright © KemLab™ Inc. 2012-2019. All Rights Reserved.

Woburn, Massachusetts USA

  • LinkedIn Social Icon
  • Twitter Social Icon

List of All KemLab™ Resists

KemLab™ Photoresists

KemLab™ offers a variety of photoresists. Below is a complete list of KemLab™ resists. Click on the film thickness chart to the right to view the resists by film thickness, competitive products, tone, developer, or exposure. 

Picture1_filmthickness.png
5302.png

Tone: Positive

Film Thickness: 0.2 microns

Applications: Diffraction Grating, Interference Lithography

Designed for film thickness of ~200 nm. It is applied in interference or holographic lithography.

Applied in broadband exposure tools or steppers

KL 5302 Hi-Res Positive Thin

5300.png

Tone: Positive

Film Thickness: 0.5 - 2.0 microns

Applications: IC fabrication

KL5300 series are positive photoresists for use in i-Line, g-Line and broadband applications. They offer high sensitivity, high resolution and excellent process latitude. They are designed for use with industry standard 0.26 N TMAH developers. Resolution of 0.55 µm can be achieved. Custom formulations are available.

KL 5300 Series General Purpose Positive Thin

6000.png

Tone: Positive

Film Thickness: 2.5 – 12 microns

Applications: advanced packaging, TSV, bumping, electroplating

KL6000 series are positive photoresists for use in i-Line, g-Line and broadband applications. KL6000 offers high sensitivity, high throughput, and excellent process latitude. It is designed for use with industry standard 0.26 N TMAH developers. There is no PEB necessary. Custom formulations are available.

KL 6000 Series General Purpose Positive Thick

10um posts, Cu, 70d, 1KX, 2.jpg

Tone: Positive

Film Thickness: 5 – 25+ microns

Applications: advanced packaging, plating, TSV, bumping

K-PRO is an advanced packaging positive photoresist for use in i-line, g-line and broadband packaging applications. It offers high sensitivity, high throughput, and excellent process latitude. It is designed for use with metal-ion or metal-ion free developers. There is no PEB required. Custom formulations are available.

K-PRO Advanced Packaging Thick

APOLLO.png

Tone: Negative

Film Thickness: 2 – 10+ microns

Applications: Compound Semiconductors, LED

APOL-LO 3200 Series resist is a negative tone advanced photoresist with Lift-Off profile for i-Line, and broadband applications. It has improved resolution and a wider process window compared to the original negative lift-off KL1600.​​ It is designed for use with industry standard developers. Custom formulations are available to adjust lift-off angle and the photospeed.

APOL-LO 3200 Hi-Res Negative Lift-Off

lift_off_resist

Tone: Positive / Negative

Film Thickness: 1-2 microns

Applications: xx

KL IR15 image reversal series of photoresists are used as either positive and negative photoresist in i-line, g-line and broadband applications.

IR15: Designed for straight profiles when used as negative photoresist

IR15 Lift-Off: Designed for lift-off profiles when used as negative photoresist

KL IR Image Reversal

SQ50, 65d, 130x, post_photoresist

Tone: Negative

Film Thickness: 2 to 100+ microns

Applications: MEMS, microfluidics

HARE SQ™ is a negative tone epoxy photoresist designed for polymeric MEMS, microfluidics, micromachining and other microelectronic applications. This resist has excellent chemical, mechanical and thermal resistance, making it suitable for permanent applications. It is fully compatible with SU-8™ processes. It is sensitive to NUV, i-line and broadband wavelengths. HARE SQ uses superior epoxies specially designed for the electronics industry, making improvements in optical transparency, particles and filter-ability, cured surface energy consistency, and photoresist lot-to-lot consistency versus industry competitors.

HARE SQ™ Negative Tone Epoxy

1000 HARP 100nm, 600uC.jpg

Tone: Positive

Film Thickness: 0.1 - 2.7 microns approximate @ 2000 rpm

Applications: direct write lithography, T-gate manufacture, X-Ray LIGA, wafer thinning

HARP™ PMMA (polymethyl methacrylate) e-Beam resist is designed for high resolution direct write e-Beam lithography. When combined with HARP-C copolymer, the HARP multi-layer system is ideal for T-gate manufacture. HARP PMMA has excellent adhesion to a wide variety of substrates, and is used as a protective coating layer for wafer thinning and sacrificial layers. KemLab HARP PMMA products are manufactured in safe solvents (anisole and ethyl lactate).

1000 HARP™ PMMA e-Beam

1000 HARP 100nm, 600uC, holes, 2.jpg

Tone: Positive

Film Thickness: 0.1 - 2.7 microns approximate @ 2000 rpm

Applications: direct write lithography, T-gate manufacture, X-Ray LIGA, wafer thinning

HARP™ PMMA (polymethyl methacrylate) e-Beam resist is designed for high resolution direct write e-Beam lithography. When combined with HARP-C copolymer, the HARP multi-layer system is ideal for T-gate manufacture. HARP PMMA has excellent adhesion to a wide variety of substrates, and is used as a protective coating layer for wafer thinning and sacrificial layers. KemLab HARP PMMA products are manufactured in safe solvents (anisole and ethyl lactate).

500 HARP™ PMMA e-Beam

1000 HARP 40nm, 600uC, 2.jpg

Tone: Positive

Film Thickness: 0.1 - 2.7 microns approximate @ 2000 rpm

Applications: direct write lithography, T-gate manufacture, X-Ray LIGA, wafer thinning

HARP™ PMMA (polymethyl methacrylate) e-Beam resist is designed for high resolution direct write e-Beam lithography. When combined with HARP-C™ copolymer, the HARP™ multi-layer system is ideal for T-gate manufacture. HARP™ PMMA has excellent adhesion to a wide variety of substrates, and is used as a protective coating layer for wafer thinning and sacrificial layers. KemLab HARP™ PMMA products are manufactured in safe solvents (anisole and ethyl lactate).

HARP-C™ Copolymer